High-Resolution VIA Pattern using Combination of DSA and EUV Lithography
발표자
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초록
내용
Vertical Interconnection Access (VIA) contact holes are crucial elements for providing electrical connections between circuit layers within a semiconductor chip, thereby facilitating the smooth flow of signals. As the size of circuit patterns is scaled down to sub-10nm, accurate control over the size and location of VIA becomes increasingly critical. Yet challenging, using existing photo lithography such as Extreme Ultraviolet Lithography (EUVL). In this study, we propose a new approach to enhance the quality of VIA patterns by applying Directed Self-Assembly (DSA) of block copolymers on EUVL generated patterns. This approach is evaluated through Monte Carlo simulations combined with Theoretical Information Coarse-Grained (TICG) model. Our results demonstrate the effectiveness of DSA in rectifying EUV patterns of inferior quality characterized by issues such as roughness, missing hole, and size variations