Electrochemical Transistors Based on InAs Colloidal Quantum Dots
발표자
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초록
내용
Transistors based on quantum dots (QDs) can be improved characteristics by controlling the ligands of QDs or introducing high capacitance material like electrolyte. The driving mechanism of electrolyte-gated transistors based on QDs has not been precisely identified or is interpreted to be based on electric double layer transistors. However, the QD film is a porous structure in which ions of electrolyte can penetrate, which means that it can follow the driving mechanism of electrochemical transistors (ECTs). To confirm the driving mechanism, we fabricated transistors in which InAs QDs and electrolytes were photo-patterned. It was confirmed that the drain current, transconductance, and volumetric capacitance were changed by controlling the thickness of QD channel. The results indicate that electrolyte gate transistors based on QDs are ECTs, which was also confirmed in a vertical structure. This research provides the possibility of broadening the range of uses of QD electronic devices.