Enhancing Micro-Pattern Interfaces in EUV Lithography through Molecular Dynamics Simulations of Acid Cleavable Moiety Introductions
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초록
내용
In semiconductor circuit micro-processing, the demand for ultra-fine line widths drives the need for advanced photoresists to address the RLS trade-off. Acid cleavable moieties (ACMs) in polymers offer promising solutions, but their impact on micro-pattern interfaces requires investigation. Employing molecular dynamics simulations, we analyze various ACM introduction strategies and their effects on structural uniformity and molecular weight distribution. Our findings guide the optimization of high-performance photoresists, advancing EUV lithography for more precise and efficient semiconductor circuits.