Development of block copolymers with organosilicon polymer gradient random-copolymer block for extreme-ultraviolet lithography pattern transfer
발표자
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초록
내용
The importance of creating finer patterns with higher quality has been emphasized, particularly for extreme-ultraviolet lithography (EUVL), a promising next-generation lithography technique. However, as pattern sizes reduced, stochastic defects in EUVL increased. Directed self-assembly (DSA) of block copolymers emerged as a viable solution to overcome EUVL's limitations, enhancing pattern roughness and enabling the production of finer patterns with higher throughputs. Here, novel block copolymer designs with concentration gradients of organosilicon polymer, Poly(methyl methacrylate)-block-poly(((bis(trimethylsilyl)methyl)acetamide)-gradient-styrene) and Poly(methyl methacrylate)-block-poly((Polyhedral oligomerized silsesquioxanes)acetamide)-gradient-styrene), are presented. Notably, the block copolymers exhibit highly ordered, vertically aligned lamellar patterns on diverse surfaces. The newly synthesized block copolymers can work as robust and efficient etching masks for EUVL pattern transfer.