A Study on the Next Generation Ag-Based High Sensitivity Photoresist for E-beam lithography
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초록
내용
The recent semiconductor industry requires high quality process technology as nodes decrease, and accordingly, the wavelength of light sources decreases, and the stress received by photoresist materials is also increasing. In the case of polymer-based photoresist materials, when exposed to high-energy beams, there are problems such as low mechanical stability unique to polymers and difficulty in forming fine patterns, so it is necessary to develop inorganic-based next-generation photoresist materials. Ag is suitable for use as a next-generation material because it has high absorbance, can elicit reactivity with a small amount of exposure, and has excellent structural stability, which can greatly help the formation of fine patterns. Accordingly, in this study, an Ag-based chalcogen compound was studied. Ag-based photoresist materials synthesized through this study are expected to present a new direction for the development of semiconductor lithography based on high sensitivity.