Nanoscale Patterned Semiconductor Surfaces for Enhancing the Sensitivity of Electrolyte-Gated Field-Effect Transistor Biosensors
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초록
내용
Electrolyte-gated field-effect transistor (EGFET) biosensors are ideal for point-of-care diagnostics, but their sensitivity declines due to electrical double layers (EDLs) that partially screen potential changes. To address this issue, we utilized lined-up trench nanopatterns from optical discs on the surface of the amorphous oxide semiconductor, which serves as a sensing layer. This was done by transferring patterns from the master to the target surface using nanoimprint lithography (NIL) with poly(dimethylsiloxane) (PDMS) as stamp material. The nanoscale patterning increased the number of binding sites and reduced Debye screening, enhancing the sensitivity of the EGFET biosensor. Furthermore, narrower trenches were found to increase sensitivity. This approach is fast, simple, and cost-effective, so it can be applied to various EGFET biosensors to improve the performance of point-of-care diagnostic devices in real-life scenarios.