High Performance Transparent p-Type CuI for Large Area Electronics
발표자
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초록
내용
Although there have been great success on n-type semiconductor for transparent electronics, the p-type counterparts are still missing for industrial applications. We have recently developed transparent p-type electronics with CuI for p-type thin-film transistor (TFT) and p-type transparent conducting electrode (TCE). With the mild processing of CuI thin-film with acetonitrile at room temperature and the hole suppression with Zn doping of CuI resulted high performance transparent TFT with mobility of 5.3 ± 0.5 cm2/Vs. For p-type TCE, the S doping of CuI was achieved with liquid iodination process. The heavily S-doped CuI exhibited large hole concentration of 3.25 × 1020 cm-3 and high conductivity of 511 S/cm with optical transmittance over 80 % at 550 nm. CuI could provide alternative solutions for high performance transparent p-type electronics.