PVDF-based Fluoropolymer Dielectrics for Low-Voltage Operating Organic Transistors and Memory Devices
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Printed and flexible electronics have garnered substantial interest as an innovative approach to the production of wearable devices, Internet of Things (IoT) applications, artificial synapses, and more. In order to facilitate low-power operation of these electronic applications, high-k dielectrics are essential components within organic field-effect transistors (OFETs) and their associated circuits. In this study, we investigated the dielectric characteristics of a polyvinylidene fluoride (PVDF)-based fluoropolymer, referred to as DPVDF (Double-bond-containing-PVDF), when used as a gate insulator in staggered OFETs. DPVDF, a modified form of PVDF-CTFE, is obtained via dechlorination to incorporate a vinyl group. This material is anticipated to present numerous advantages, including high capacitance, adaptable dielectric properties, and resistance to both chemicals and heat. The low-voltage and ferroelectric properties of the DPVDF insulators were substantiated by the fabrication of OFETs using conjugated polymer semiconductors.