The Polymer Society of Korea

차세대 에너지 저장/변환용 소재 기술

포스터발표

Enhanced performance and stability of perovskite solar cells by atomic layer deposited electron transport buffer layer

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Electron transport layer (ETL) is of utmost importance in determining the efficiency and stability of perovskite solar cells (PSCs). For inverted PSCs, a buffer layer is often required for ETL to improve its morphology and photocurrent generation. Herein, we utilized low-temperature atomic layer deposition (ALD) technique to prepare tin oxide (SnO₂) as ETL buffer layer. The ALD-deposited SnO₂ (ALD-SnO₂) has improved the morphology of PC₆₁BM by covering pinholes and segregated phases. The use of ALD-SnO₂ buffer has significantly improved the efficiency of PSCs from 12.17% to 19.17%, which is attributable to the reduction of electron traps and recombination loss. Moreover, the use of ALD-SnO₂ buffer also greatly improved the stability of PSCs, which exhibited 90% efficiency retention upon 30 days of storage in ambient air. This study demonstrates that low- temperature ALD-SnO₂ is an excellent ETL buffer for the fabrication of efficient, stable inverted PSCs.

3PS-13

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