Enhancing the Performance of Perovskite Quantum Dots Light-Emitting Diodes via a Modified Hole Injection Layer
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Perovskite quantum dots light-emitting diodes (PeQLEDs) are promising candidates for next-generation lighting and displays. PeQLEDs generally rely on the commercialized poly(3,4-ethylenedioxythiopheme):poly (styrenesulfonate) (PEDOT:PSS) as hole injection layer (HIL). However, the energy level mismatch between the highest occupied molecular orbital (HOMO) level of pristine PEDOT:PSS (-5.1 eV) and PeQDs layer often leads to inferior hole injection and transportation, thereby hindering the performance of PeQLEDs. Herein, a modified HIL (mHIL) by incorporating PFI into PEDOT:PSS is used to fabricate PeQLEDs. The use of mHIL has enhanced the hole injection and transportation of PeQLEDs, resulting in the improvement of devices. The external quantum efficiency (EQE) of PeQLEDs showed an enhancement from 6.39% (PEDOT:PSS device) to 12.93% (mHIL device). These results demonstrate that mHIL is a superior candidate over the commercialized PEDOT:PSS for fabricating PeQLEDs.