High-mobility electrolyte-gated perovskite transistors on flexible plastic substrate via interface and composition engineering
발표자
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초록
내용
Herein, solution-processed poly(3-hexylthiophene) (P3HT) was introduced on a perovskite surface via interfacial engineering to enable the use of an electrolyte dielectric. Among the fabricated lead iodide-based perovskite devices, the P3HT-capped formamidinium (FA) lead triiodide (FAPbI3) FETs exhibited the best hole mobility of 24.55 cm2 V- 1 s- 1 (average ≈ 16.83 ± 4.86 cm2 V- 1 s- 1) on a plastic substrate at sub-2 V compared to the methylammonium (MA) lead triiodide (MAPbI3), and mixed A-cation lead triiodide (FA0.2MA0.8PbI3) based devices. This outstanding performance was attributed to an increased charge carrier density in the perovskite-P3HT hybrid channel owing to the high capacitance of the electrolyte dielectric and better injection properties of the FAPbI3 perovskite.