Low-Temperature Direct Growth of Amorphous Boron Nitride Films for High-Performance Nanoelectronic Device Applications
발표자
()
초록
내용
We have successfully enhanced and stabilized the electrical properties of a graphene field effect transistor by fabricating a sandwiched structure of amorphous boron nitride (a-BN)/graphene (Gr)/a-BN. The a-BN film was grown directly using low-pressure chemical vapor deposition at a low temperature of 250 °C and served as a protective layer. The structural and chemical states of the as-grown a-BN were confirmed through a variety of spectroscopic and microscopic analyses. Upon comparing the Raman spectra of Gr/SiO2 and a-BN/Gr/a-BN structures, we found that encapsulated graphene maintained its stability when exposed to ambient air, unlike its non-encapsulated counterpart. Additionally, we determined the mobility of the a-BN/Gr/a-BN structure to be 17,941 cm2/Vs. This study presents a straightforward method for producing uniform a-BN films, a crucial component for encapsulating a range of van der Waals materials and promoting future advancements in nanoelectronics.