Oxygen vacancy suppression of zinc oxide via light exposure for enhancing detectivity in organic photodetectors
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This study successfully enhanced the effective detectivity of the self-powered organic photodetector (OPD) through the interfacial modification of zinc oxide (ZnO). ZnO exhibits excellent charge mobility, however, its sensitivity to light can lead to device instability, necessitating improvements. To address this, the characteristics of ZnO were utilized in reverse by surface modification through light exposure, inducing controlled functionalities. The surface morphology of the light-exposed ZnO layer is smoother and the roughness is reduced, indicating efficient charge transport and limited recombination. Furthermore, the light-exposed ZnO layer exhibited enhanced charge injection barriers into the active material, effectively suppressing dark current at reverse bias. Based on the suppressed dark current, the detectivity was improved by 3.9 times compared to the conventional devices, and the noise current of the OPD is effectively suppressed.