Molecular Dynamics Simulation for Chemically Amplified Resist Deprotection and Line Edge Roughness Assessment in Nanolithography
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초록
내용
Utilizing all-atomic molecular dynamics simulations, we mimic the deprotection process of chemically amplified resist by substituting Li ions for protons, overcoming simulation limitations. A reaction criterion is established based on the proximity of the protected group and Li ion. Remarkably, our results replicate experimental deprotection rates observed via FTIR. Additionally, delayed volume loss validates our approach. Leveraging these insights, we adapt our method to assess Line Edge Roughness (LER) during photoresist development, promising effective LER mitigation strategies. This work advances nanolithography resist materials.