Wafer-scale transistor arrays fabricated using slot-die printing of molybdenum disulfide and sodium-embedded alumina
발표자
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초록
내용
Solution-processed 2D materials enable scalable production of next-gen electronic devices. However, existing methods compromise between scalability and material quality, limiting practical use. We demonstrate wafer-scale molybdenum-disulfide transistor arrays fabricated via slot-die printing. Ink formulations of molybdenum disulfide nanosheets and sodium-embedded alumina are employed for semiconductor and gate dielectric layers, respectively. Transistors achieve average charge carrier mobilities of 80.0 cm2 V−1 s−1 (FET) and 132.9 cm2 V−1 s−1 (Hall) at room temperature. This high mobility is attributed to sodium-embedded alumina, promoting band-like charge carrier transport in thin-film networks.