High-Performance NIR-Selective Photomultiplication-Type organic photodiode with PEIE Interfacial Layer in Metal-Insulator-Semiconductor Structure
발표자
()
초록
내용
In order to develop high-performance NIR-selective photomultiplication-type organic photodiode (PM-OPDs), we suggest PM-OPDs with PEIE interfacial layer in metal-insulator-semiconductor structure. Generally, donor polymer’s band gap should be appropriately large due to electron-hole dissociation. However, owing to this characteristic, demanding of low band gap polymer for a NIR-selective device conflicts each other as a trade-off concept. With this structure, because electrons are trapped at the interface of insulator, high EQE over 100% is ensured regardless of trap energy depth meaning that selecting semiconductor polymer become easy. The optimal PM-OPDs exhibit high NIR-selective absorption. Meanwhile, the optimal PM-OPDs exhibit the large EQE value and specific detectivity (D*).