Tailoring electrical properties of MoS<SUB>2</SUB> FETs with spatially controlled surface charge transfer doping via selective inkjet printing
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Surface charge transfer doping (SCTD) has been studied to tailor the electrical properties of molybdenum disulfide (MoS2)-based devices because the 2-dimensional (2D) materials with atomically thin nature are highly sensitive to the SCTD. However, the facilitating spatially selective doping on 2D devices for complementary logic devices is a remaining challenge because typically controllable SCTD effects depend on the immersion time and doping concentration. In this work, we will present the spatially controllable SCTD of MoS2 field-effect transistors (FETs) by drop-on-demand selective inkjet printing. To control SCTD of MoS2 FET, we introduced the inkjet printing with well-defined ink droplet with benzyl viologen (BV) dopants. The inkjet printing with the high degree of design freedom and various doping concentration enables the gradual enhanced electrical properties of doped MoS2 FET as increased doping area and doping concentration.