Thermally Co-Evaporated Zinc Doped Copper Iodide Thin Film
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Developing transparent material has received significant attention both commercially and academically due to the continuous growth of transparent display market. Metal oxide is a great candidate corresponding thereto and has good transparency and electrical properties. Unfortunately, most commercially available metal oxide semiconductors are n-type (a-IGZO) with few p-type. To overcome this, copper iodide has been proposed as a promising p-type candidate owing to its high optical transparency and conductivity, and low-temperature synthesis. The problem with copper iodide is the uncontrollable carrier concentration originated from copper vacancy, which can be solved through Zn (hole suppressor) doping using solution process. Furthermore, copper iodide films need to be patterned to make a complex circuit. Here, the thermal evaporation was adopted because of various advantages such as high reproducibility and uniformity, ease of controlling film thickness, and solvent free process.