Effect of dielectric properties on Vertical organic field-effect transistors
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Organic field-effect transistors (OFETs) have attracted much attention due to their low cost and large-area coating, but have obvious limitations due to low charge carrier mobility and structural reasons. Since vertical organic field-effect transistors (VOFETs) structurally have the channel length defined by the thickness of the organic layer, the channel length can easily reach the nanometer level, overcoming the limitations of OFETs. In order to realize high-performance VOFETs, the electric field effect of the gate electrode must be effectively transferred to the organic layer, and dielectric for effective charge accumulation is essential. Here, we suggest the VOFETs that can be made with a simple solution process using silver nanowires as the source electrode and compare the effects of dielectric properties modified on the dielectric surface using a self-assembled monolayer (SAMs).