Surface defect engineering of Ag2S nanocrystal toward high-performance photomultiplication type photodiode
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초록
내용
In this work, a photomultiplication-type organic photodiodes (PM-OPDs) with a Ag2S nanocrystal (NC) as a trap material are introduced. Well difined electron trap states in Ag2S NCs within poly(3-hexylthiophene-2,5-diyl) (P3HT) matrix is ensuring high performance of PM-OPDs. The Ag2S NCs embeded P3HT matrix confirmed by UV-Vis absorption spectroscopy, atomic force microscopy and grazing incidence X-ray diffraction analyses. All the measurement clearly show that the Ag2S NCs embedded morphology efficiently enhance electron trapping from P3HT matix. Space charge limited current study shows that gradual increased electron trap density of state and hole mobility in the matix.