High-performance metal halide perovskite thin-film transistors
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We report high-performance p-channel perovskite thin-film transistors based on inorganic caesium tin iodide (CsSnI3) semiconducting layers that have moderate hole concentrations and high Hall mobilities. The CsSnI3 perovskite channels are formed by engineering the film composition and crystallization process using a tin fluoride (SnF2)-modified caesium iodide (CsI)-rich precursor with lead substitution. The optimised transistors exhibit field-effect hole mobilities of over 50 cm2 V-1 s-1 and on/off current ratios exceeding 108, as well as high operational stability and reproducibility.