High Mobility Low-voltage Operation in Anion Doped Single-walled Carbon Nanotube (Single-walled carbon nanotube) Network n-type Field Effect Transistors (CNTFETs)
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Solution-processed semiconductor doping would be a powerful strategy in order to improve carbon nanotube field-effect transistors (CNTFETs) performance. CNTs are promising material for high performance, large area printable thin film transistors. However, ambipolar property of SWNTs have drawbacks in CMOS-like circuits such as large static power consumption. N-type doping is more challenging issue in solution processed FETs rather than p-type. We sorted large diameter semiconducting-SWNTs with the high purity from as-grown mixed-type SWNTs using conjugated polymer. Selectively sorted s-SWNTs and Lewis base anion dopant were simply spin coated for active layer. We successfully conducted CNTFETs n-type doping and it was revealed optically such as UPS, UV-VIS-NIR and Raman spectroscopy. The devices were also electrically analyzed using contact resistance and carrier concentration. Doped CNTFETs were operated only at Vd of 0.5 V and 1.7 folds mobility increment was achieved.