Organic-inorganic hybrid perovskites have been attracting considerable attention for photovoltaic applications due to their high power conversion efficiency. These hybrid perovskites offer the mechanical flexibility and solution processability inherent to organic materials as well as high carrier mobility inherent to the inorganic part. However, there is still challenging to achieve a reliable operation due to the large current-voltage hysteresis. Furthermore, crystal defects at the grain boundaries can act as a major channel of ion migration in perovskite films. In this research, we focused on using lead-free tin-based perovskites as the semiconductor in thin-film transistors (TFTs). we controlled crystallization to enlarge the grain size, and thereby improving the mobility and hysteresis characteristics. This work provides an effective way to achieve the high-performance in organic-inorganic hybrid perovskite TFT devices.