Performance enhancement of PbS quantum dot-based NIR photodetectors via introducing π-conjugated polymers as a hole transporting layer
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PbS colloidal quantum dot (CQD) photodetector (PD) has been grown attention as the next generation photodetector due to its unique properties such as easily tunable bandgap, high absorption efficiency and so on. In this work, we introduced benzodithiophene (BDT)-based conjugated polymers as a hole transporting layer (HTL) to improve its performance. The devices with conjugated polymer HTL showed the decreased dark current density (3.80×10-8A/cm2) and increased responsivity (0.109A/W) under 940nm illumination at -0.5V bias. HTL gives significant effect on the morphological properties and charge carrier mobility.