Non-fullerene based N-type PDI(Perylene Diimides)-derivative Interlayer engineering for Efficient Perovskite Photodetection
발표자
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초록
내용
Here, to fabricate an efficient p-i-n perovskite photodiode, a promising electron transport material is newly introduced in this study. It corresponds to N-type PDI(Perylene Diimides)-derivative as a non-fullerene small molecule. It is easily soluble in alcoholic solvents. Thus, it would be applied as an additional buffer layer on the organic solvent-based electron transport layer. In this context, we propose the modification strategy of PDI-derivative layer to obtain a high-quality interface between the top electrode and the material. As a result, it reduced unnecessary charge injection from electrode to photosensitive layer under dark condition. This is due to the chemical structural characteristics of the PDI-derivative. Further, it prevents the inflow of oxygen into the perovskite layer as a stabilizer (passivation layer). Finally, in order to precisely investigate this phenomenon, the stability of device driving characteristics was observed in the photodiode device.