High Performance with Effective Dark Current Suppression on Organic Photodetectors Through Carrier Blocking Layer
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초록
내용
Near-infrared organic photodetectors (NIR OPDs) are being studied as next-generation optoelectrical devices due to their low manufacturing cost, light weight, and easy of manufacturing using a solution process. Sensitive detection of NIR light has many important applications in research and industry. Dark current is the most important parameter to determine detectivity of NIR OPDs. In this study, we have demonstrated non-fullerene acceptor (NFA) based NIR OPDs with a reduced dark current by using carrier blocking layers (CBLs) to mitigate the reverse charge injection. We use PTB7-Th for donor of active layer, and IEICO-4F for acceptor of active layer. Compared to a device without CBLs, the dark current was effectively suppressed when with CBLs. Therefore, it was confirmed that detectivity increased by 5 times. As a result, we confirmed that the dark current was effectively reduced and the detectivity improved by using CBLs for NIR OPDs.