Metal Chalcogenide based- Photoresists with Chemical Amplified Ligand
발표자
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초록
내용
Photoresist (PR) is a photosensitive material used in photolithography to form a patterned circuit. Polymer-based PRs are the current standard material. However, these PRs are low tolerance to etching conditions at short wavelength such as extreme UV (EUV). Then metal oxide-based PRs are considered to be one of the candidates to higher etch resistance at short wavelength, but these PRs have low photosensitivity at EUV. Metal chalcogenide can be expected to be great substitute PR material than the metal oxide-based PR due to high light absorption at EUV. In this study, we synthesize metal chalcogenide compounds introduced with chemical amplified ligand (CAL). When CAL is exposed to light, it is occurred decomposition then converting a photoacid generator (PAG). PAG promotes the condensation reaction of the metal chalcogenide that is insoluble in water and organic solvents. As a result, we confirmed that CAL-introduced metal chalcogenide compounds functioned successfully as negative PR.