Multi-Layered Triboelectric Nanogenerator for Artificial Synapse
발표자
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초록
내용
Triboelectric nanogenerator (TENG) has attracted intense attentions from the field of both energy storage systems and wearable electronics. However, structural design strategies for efficient TENG performance still remain critical challenges. Herein, we present multi-layered TENG (M-TENG) using microdome patterned polydimethylsiloxane (PDMS) film and 1H,1H,2H,2H-perfluorooctyltrichlorosilan (FOTS)-coated BaTiO3 (BTO)/PDMS composite film served as triboelectric layers. M-TENG can generate distinct multiple spikes corresponding to the number of layers under mechanical stimuli of same applied force and frequency. As a result, M-TENG shows the maximum power of 7.56 μW/cm2 at 100 MΩ under external applied force of 19.6 kPa. For an application of artificial synapse, M-TENG coupled with organic electrochemical transistor (OECT) is successfully fabricated. It exhibits continuous increase and gradual decay of post-synaptic current under several stimulations, leading to long-term plasticity.