Vertical Organic Thin Film Transistors: Overcoming Limitation of Next Generation
발표자
()
초록
내용
The current record for high-speed organic transistors is held by the vertical organic thin film transistor (VOTFT) due to very short vertical carrier paths and simple device structures for diverse applications. Electrochemically anodized aluminum oxide is used in vertical organic permeable base transistor (vertical OPBT) and vertical organic field-effect transistor (VOFET) for excellent dielectric structures and interface modifications. For the first time we show the successful enhancement of vertical OPBT and VOFET with the electrochemically-oxidized base electrode by anodization. Leakage currents and parasitic capacitances are significantly reduced, paving the way to even the highest transit frequencies amongst the reported organic transistors. The low leakage current, high on/off current ratio, high-speed, and low operating voltage are demonstrated with the electrochemically anodized electrodes.