Tin oxo cluster-based Hybrid Organic-Inorganic Photoresist for EUV Lithography
발표자
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초록
내용
In industry, EUV (13.5 nm) lithography is an important factor in determining the superiority of technology leadership. Many global companies invest in EUV, and DRAMs, the early generation, have already been commercialized to mobile devices. The EUV light has 14.3 times higher energy compared with ArF. Therefore, high resolution and low production cost can be achieved by reducing patterning steps and eliminating defects with EUV single patterning. However, EUV comes with less photons and difficult to be absorbed by all materials. Particularly, organic photoresist has low absorption rate for EUV. Here, we suggest that tin oxo cluster can be an ideal material for EUV. It has high EUV absorption rate, and short mean-free path due to high mass-density, improving electron blur. In addition, high etch rate and possibility of sensitivity engineering based on the property of metals with large redox potential are key advantages. In the future, we anticipate the industrial use of tin oxo cluster.