Nanostructured Hole-Transporting Layer Enhances Light-Trapping Effect in CsPbI<SUB>3</SUB> Perovskite Quantum Dot Solar Cells
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CsPbI3 perovskite quantum dots (PQDs) are actively studied as a light absorber in solar cells due to their excellent optoelectronic properties. However, the low short-circuit current density (JSC) limits the improvement of photovoltaic performance because of the insufficient light absorption in PQD absorber layer. Here, we introduce a nanoimprint lithography (NIR) to improve light absorption in PQD solar cells through enhancing the light trapping effect. We carried out the pattering of hole- transporting layer via NIR and subsequently deposited MoO3/Ag electrodes for fabricating the nanostructured PQD solar cells. We confirmed that the successful fabrication of nanostructured layers using scanning electron- and atomic force-microscopes. In addition, enhanced light absorption was confirmed using double path absorption measurement. As a result, the nanostructured PQD solar cells showed improved power conversion efficiency of 13.70% thanks to the enhancement of a JSC of 16.23 mA cm-2.