Short-term and long-term memory effects of polymer transistors with a buffer layer of insulating polymers
발표자
()
초록
내용
Organic transistor is an interesting platform because novel functionalities can be easily implemented. In this work, we introduced a polymer buffer layer between electrolyte and polymer semiconductor to cause the memory effects. We observed that, when a polyvinylpyrrolidone layer was inserted, electrolyte-based organic transistors made of poly(3,4-ethyleredioxythiophene) (PEDOT) showed sharp increase and decays in the drain current after applying gate pulses. We varied the pulse number, intensity, and duration and extracted parameters relevant to the short-term and long-term memory effects. We also varied the thickness of the buffer layer to control plasticity of the devices.