All-Photopatterned, Fully Stretchable Ion Gel-Gated Transistor Array Based on Flexible Photo-Crosslinker
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Skin-like electronics based on fully stretchable materials have gained much interest owing to their superior stretchability and skin conformability. However, the realization of densely integrated stretchable devices has been challenging as the rubbery nature of stretchable materials makes them incompatible with the advanced microfabrication techniques. Herein, to overcome the limitation, we present a novel method for the realization of highly patterned stretchable transistor arrays by utilizing ‘flexible photo-crosslinkers’ coupled with stretchable electronic materials. The photo-crosslinkers allowed sequential fabrication of highly integrated ion-gel gated stretchable transistor array without the deterioration of electronic properties. Furthermore, the developed stretchable transistor achieved high performance (μh＞25.8cm2/Vs) under low voltage conditions(