Van der Waals magnetic tunnel junctions with atomically thin two-dimensional magnetic semiconductors
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초록
내용
The family of two-dimensional (2D) materials has grown rapidly from semimetals and semiconductors to systems exhibiting collective electronic properties. In particular, several 2D magnetic compounds have been recently discovered. Experimental observations of the magnetic ground state in single atomic layers of such materials are not only important for fundamental interest, but also technologically relevant for next-generation spintronic devices. In this talk, I will present studies of atomically thin magnetic semiconductors CrX3 (X= Cl, Br, and I) as well as their device applications. By sandwiching CrX3 between few-layer graphene electrodes, we are able to fabricate high-quality van der Waals magnetic tunnel junctions and electrically probe the magnetic properties of the three materials. Moreover, we found that CrI3 exhibits an extremely large tunnel magnetoresistance (~106%) as well as a robust memristive switching behavior that is tunable with magnetic field.