The synthesis of photosensitive polyimide for semiconductor using o-nitrobenzyl ether group
발표자
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초록
내용
Aromatic polyimide is a kind of excellent high performance polymer having thermal resistance and chemical resistance to radiation. Besides, since it has a relatively low dielectric constant and excellent mechanical properties, it is widely used in the space industry and semiconductor industry. Therefore a large molecular weight and flexibility has been required to improve physical properties of PI such as elongation rate. In this study, we synthesized dianhydride having a hydroxyl functional group in the molecular structure and three kinds of aromatic ethylene diamines to improve flexibility of the PI film. And then polymerization was performed using DHBA and various kinds of synthesized monomers. After polymerization, o-nitrobenzyl bromide was substituted to the hydroxyl group of the polymer to synthesize photosensitive polyimide. The structure of the polymerized PSPI was analyzed by NMR and FT-IR. Thermal stability was also evaluated by TGA.