Annealing-Free Solution-Processed NiO Nanoparticle Film as Hole Transporting Layer in Stable Organic Photodiodes
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Organic optoelectronic devices have gained attraction due to a combination of a wide range of light absorption and high conversion efficiency with a low-cost fabrication, light-weight, and flexibility. Despite the impressive improvements of active layer material optimization, the device performance can be affected significantly by the choices of the charge-selective interlayer materials. In this work, nickel oxide (NiOx) nanoparticles were synthesized by a solution-based method, and post-thermal-annealing-free NiO nanoparticle (NP) thin films were used as a hole transporting layer (HTL) in organic photodiodes (OPDs). Utilization of the NiO NP films, a specific detectivity (D*) was improved 3.0 times, D* = 8.7×1012 Jones at -0.5 V at a wavelength of 530 nm with an intensity of 400 µW, compared to those values from the PEDOT:PSS films. This enhancement mainly originated from 9 times decreased leakage current.