Highly Fluorinated Polymer Photoresist composed of spiropyranyl and perfluoroalkyl methacrylate monomers for Organic Light Emitting Diode (OLED) Displays process.
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We synthesized highly fluorinated polymers and used as a photoresist in an OLED display process. FSI-0, a copolymer was synthesized by using a radical polymerization reaction of 1H,1H,2H,2H-perfluorooctyl methacrylate (FOMA) and spiropyranyl methacrylate (SPMA), which are highly fluorinated monomers, and dissolved in fluorous solvent to form a thin film. As a result of UV irradiation, a negative pattern was obtained in which the exposed portion was not dissolved in the fluorous solvent. When isobornyl methacrylate (IBMA) is used together to improve the glass transition temperature (FSI-4) A positive pattern with increasing solubility was obtained. When the pixel patterning of OLED is performed using this, the HTL layer that has undergone the pattern process does not show any signs of serious damage, so it can be usefully applied to realize micro/nano-patterning of various organic materials as a new concept imaging material.