Synthesis and Thin Film Properties of a Solution-based TiO2-polyimide Composite for High-k Dielectric
발표자
()
초록
내용
The development of high performance flexible electronics requires dielectrics possessing a high dielectric constant and enhanced mechanical stability. We report on a novel solution-based TiO2-polyimide composite dielectric based on TiO2 precursor as a dopant in cross-linkable polyimide (PI). Polyimide (DOCDA-6FHAB) was synthesized using the monomers, 5-(2,5-dioxytetrahydrofuryl)-3-methly-3-cylohexene-1,2-dicarboxylic anhydride (DOCDA) and 5,5'-(perfluoro propane-2,2-diyl)bis(2-aminophenol) (6FHAB). And then, we introduced TiO2 precursor to make a high dielectric constant polyimide nanocomposite layer. Polyimide nanocomposite bilayer film showed high dielectric constant (6.15) and low leakage current density (1.05ⅹ10-5 A/cm2 at 1 MV/cm) in metal-insulator-metal (MIM) devices. Detailed synthetic routes of polyimide and nanocomposite film fabrication condition will be presented.