Effective Dark Current Suppression for High-Detectivity Organic Near-Infrared Photodetectors Using a Non-Fullerene Acceptor
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Near-infrared organic photodetectors (NIR OPDs) have attracted considerable attention because of their inherent advantages. In particular, the development of NIR detection at 900-950 nm is crucial for noise-free communication in ambient environments. In this work, we demonstrate high-detectivity NIR OPDs by employing a non-fullerene acceptor (ITIC) used with a NIR-absorbing conjugated polymer (PNIR) for bulk heterojunction (BHJ), which significantly suppressed dark current. Systemic characterizations including electrical, structural, and morphological analyses revealed that ITIC effectively reduces charge recombination during the operation of the OPDs under NIR illumination, resulting in dark current reduction and high-detectivity of over 3.2ⅹ1011 Jones at 900–950 nm. The results presented demonstrate that utilizing a non-fullerene acceptor for BHJ-type NIR OPDs is evidently a strategic approach for the simultaneous achievement of low-dark current and high-detectivity of NIR OPDs.