Artificial Synaptic Tactile Transistor Based on Hydrogen Bond-Triggered Ion Pump
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초록
내용
Recently, the development of tactile interface for a neuromorphic system has attracted attention as a promising next-generation e-skin such as artificial sensory nervous system. However, previous researches have encountered mechanotransduction sensitivity and restricted plasticity, which are caused by the integration of tactile sensors and synaptic transistors in parallel. We demonstrated a synaptic tactile transistor (STT) based on hydrogen bond triggered ion pump capable of ion migration which is due to the reversible H-bond breakage of ion pairs on silica particles surface under mechanical stimulus. The released free ions are penetrated into the bulk regime of polymer semiconductor, hence, mobile hole charges can be produced. As a result, the STT realized both short and long term plasticity (LTP ＞ 200 sec) according to the applied amplitude of pressure. We believe this system will provide new insight into developing synaptic electronics for neuroprosthetics and soft robotics.