An oligomer semiconductor with an asymmetric end group for solution-processed OFETs
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We report on the synthesis of an oligomeric semiconductor, C-HNA, and study their potential application as a thin-film active layer for organic field-effect transistors (OFETs). The measured field-effect mobility of the spin-coated C-HNA films for OFETs was 2.3 × 10 -2 cm2/(V⋅s). The performance of the resulting OFETs is due to the tendency of packing asymmetric oligomers in which asymmetric cyclohexylated alkyl chains are aligned vertically to the substrates, which contributed to favorable charge transfer.