Development of ultra-thin stretchable dielectric with high performance via initiated Chemical Vapor Deposition and its applications
발표자
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초록
내용
The most advanced intrinsically stretchable devices apply solution-processed dielectric materials, which exhibit low dielectric constant, and poor electrical characteristics. To overcome limitations, we describe a different strategy for the fabrication of intrinsically stretchable electronics, the system of initiated Chemical Vapor Deposition (iCVD). The developed stretchable dielectric showed excellent mechanical characteristics (Ultimate tensile strain ~ 81%), and superior electrical properties (Ebreak ~ 2.3 MV/cm). Also, intrinsically stretchable transistors with new stretchable dielectric exhibited high on/off ratios and carrier mobilities with minimal changes after stretching, and it could be operated within only 10 V because of low thickness of dielectric. Therefore, this device composed of ultrathin stretchable dielectric film will be a next-generation platform for the development of skin-like electronics.