Synthesis of Highly Fluorinated Polymer Photoresist for Photo-patterning of Organic Light Emitting Diode (OLED) Displays
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A highly fluorinated polymers for non-chemically amplified resists (non-CAR) were prepared, and micro-scale photo-patterning process by photolithography for organic light emitting diode (OLED) pixels was proposed. 'The highly fluorinated photoresist’, poly(FOMA-r-SPMA-r-αBMOMA-r-IBMA) was synthesized. It was composed of 1H, 1H, 2H, 2H-perfluorooctyl methacrylate (FOMA), isobornyl methacrylate (IBMA), spiropyran methacrylate (SPMA) and alpha-benzil monoxime methacrylate (α-BMOMA) as monomers. The copolymer was synthesized via reversible addition-fragmentation chain-transfer (RAFT) polymerization or free radical polymerization. When the polymer photoresist is irradiated by UV exposure (wavelength : 365 nm), the solubility of the exposed portion is increased due to a change in chemical structure to form a positive-tone pattern. Furthermore, An OLED pixel was manufactured using this highly fluorinated photoresist and a 15 µm half-pitch green phosphorescent OLED pixels was confirmed.