Long-term retention and low power OTFT-NVMs with hydroxyl group charge trapping layer via ultrathin iCVD dielectric.
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초록
내용
With the development of wearable devices. Organic flash memory is considered as one of the essential devices for data storage. However, OTFT-NVMs have high operation voltage and data stability problems caused by thick insulation layer. This study introduced iCVD dielectric. Tunneling layer is poly(1,3,5-trimethyl-1,3,5-trivinyl cyclotrisiloxane) (pV3D3) and blocking dielectric is poly(1,4-butanediol diacrylate) (pBDDA), with excellent insulation properties (Ebreak ＞ 8 MV/cm with its thickness of 21.3 nm). Between the tunneling and the blocking a 6-nm thick ultrathin trapping layer with a hydroxyl group was fabricated. Novel trapping layer synthesize with the copolymer of BDDA and 2-Hydroxyethyl acrylate (HEA). Finally, we can fabricate low power and stable memory. Large window 5.86 V at programming/erasing voltage 16 V. Highly stable memory retention characteristics, after 108 s. In addition, excellent flexibility maintains memory performance after 2.72 % of strain applied.