Doping or Mixing: Role of Monovalent Metal Iodide in Two-Dimensional Perovskite Transistor
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The application of organic-inorganic perovskite on thin-film transistors (TFTs) is recently gaining significant attention due to their intrinsically high carrier mobility. Research on perovskite TFT has been focused on engineering approaches, while study on doping is crucial, but yet to be investigated. In this study, we report the combined theoretical and experimental approaches to investigate the structural variation of phenethylammonium tin iodide ((PEA)2SnI4) perovskite before/after doping and the resultant device performance. Theoretical studies demonstrate that perovskite structure was destroyed after incorporation of the chosen monovalent cations, Cu+, Na+ and Ag+. A series of experiments with CuI, NaI and AgI on transistors and phototransistors revealed enhanced device performance with increased mobility, reduced hysteresis and enhanced detectivity. Especially, heterostructure of CuI-(PEA)2SnI4 film showed best performance, due to its excellent hole transporting property.