Tuning Interfacial Properties by Spontaneously Generated Organic Interlayers in Top-Contact-Structured Organic Transistors
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초록
내용
One of the important factors to improve the performance of organic field-effect transistors (OFETs) is an effective charge carrier injection from the metal electrode to organic semiconducting layer, and thus various studies have been conducted so far to improve this. In this study, the organic semiconducting layer was formed by blending the thiol SAM materials with PBTTT-C14 solution to control the nature of the charge carrier injection in the top-contact bottom gate (TCBG) structure of the OFETs, for which a spontaneously generated organic interlayer was produced through thermal process on the electrodes. This result is simple and applicable on the TCBG-structured OFETs, which is impossible to be applied with SAM treatment until now. The field-effect mobility of PBTTT-C14 FETs with spontaneously generated organic interlayer was improved to 0.25 cm2/Vs as compared to 0.041 cm2/Vs of the pristine case, and the threshold voltages also converge to zero.