Phenylethylammonium Iodide Induced Interface Engineering and Surface Passivation for Efficient and Stable Perovskite Solar Cells
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초록
내용
Phenyl ethyl−ammonium iodide (PEAI) induced bilateral interface engineering was developed via incorporation of its activated bottom and top ways. As for bottom way, PEAI solution is spin−coated on the top of hole transfer layer (HTL) then active film is deposited. As a result, high−quality perovskite film with enlarged grain sizes can be obtained. Moreover, PEA+ could realize superior energy level match between HTL and active layer, largely decreasing energy loss during charge transfer. With regard to top way, PEAI solution is deposited on the top of perovskite film to construct 2D/3D stacked structure for active layer. Because the 2D top layer acts as a capping layer to prevent water penetration, the stability of the perovskite active layer is significantly enhanced. A PeSC device fabricated based on this combination exhibits enhanced power conversion efficiency and extended device lifetime compared to a pristine PeSC.