Breath-Figure Molding of Polymer Transistors to Implement Low Power, Flexible, and Highly Selective NO<SUB>x</SUB> Sensors
발표자
()
초록
내용
Strategically designed polymer semiconductor thin film morphology with both high reactivity to the specific gas analyte and high signal transport efficiency is reported to realize highly selective/sensitive flexible NOx transistor sensors. Breath-Figure (BF) molding of polymer semiconductors enables a finely defined degree of nano-porosity in polymer films with high reproducibility while maintaining a high charge carrier mobility characteristics of organic field effect transistors (OFETs). The optimized BF-OFET with a donor-acceptor copolymer exhibits a maximum responsivity of over 104%, sensitivity of 774%/ppm, and limit of detection of 110 ppb against NO. Selectivity to NOx analytes is tested by comparing the sensing ability of BF-OFET to other reducing gases and volatile organic compounds; the BF-OFET gas sensor platform monitors specific gas analytes based on their polarity and magnitude of sensitivity.