AlGaN Light-Emitting Diodes with Localized Surface Plasmon Resonance Mediated by High Density Array of 40 nm Al Nanoparticles
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Research on localized surface plasmon resonance (LSPR) has recently attracted academia attention because of metal nano-structure having a size of nm can interact with electromagnetic waves and bring significant electromagnetic enhancement. In particular, Al nano structures below sereral tens of nanometer exhibit properties at deep ultraviolet regions. However, it is difficult to form metal nano structures below several tens of nanometers. In this study, we present a remarkable improvement in the efficiency of light-emitting diodes (LEDs) based on AlGaN through the coupling with high-density array of Al nanoparticles (NPs) generating LSPR. The Al NPs with diameter of ~ 40 nm were uniformly distributed near the AlGaN multiple quantum well active region by block copolymer lithography. The LSPR generated by the array of Al NPs reduced the radiative recombination lifetime, increasing the internal quantum efficiency by 33.3% and electroluminescence property by 57.7% respectively.