Non-volatile Resistive Random Access Memory based on aromatic polyimide containing anthracene moiety
발표자
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초록
내용
Recently, resistive random access memory (ReRAM) have attracted much attention from researchers as a next generation nonvolatile memory due to simple metal electrode-insulator-metal electrode(MIM) structure and excellent memory characteristics. Polyimides are attractive polymers for resistive random access memory applications due to their outstanding thermal stability, chemical resistance, and mechanical strength. In this study, aromatic polyimides containing the anthracene moieties were prepared from (4,4’-(hexafluoroisopropylidene)diphthalic anhydride (6FDA) and diamine containing anthracene moiety and later used as memory active layer in the fabrication of a ReRAM device. We studied their polymer properties including resistive random access memory characteristics originated from the anthracene moieties.